IXKK 85N60C
CoolMOS ? 1) Power MOSFET
Low R DSon , high V DSS
Superjunction MOSFET
D
V DSS = 600 V
I D25 = 85 A
R DS(on) max = 36 m Ω
TO-264
G
S
G
D
E72873
S
?
tab
MOSFET
Features
Symbol
V DSS
V GS
I D25
I D100
Conditions
T VJ = 25°C
T C = 25°C
T C = 100°C
Maximum Ratings
600 V
± 20 V
85 A
55 A
? 3 rd generation CoolMOS ? 1) power
MOSFET
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
E AS
E AR
dV/dt
single pulse I D = 10 A; T C = 25°C
repetitive I D = 20 A; T C = 25°C
MOSFET dV/dt ruggedness V DS = 0...480 V
1800
1
50
mJ
mJ
V/ns
due to reduced chip thickness
Applications
? Switched mode power supplies (SMPS)
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
? Uninterruptible power supplies (UPS)
? Power factor correction (PFC)
? Welding
? Inductive heating
R DSon
V GS(th)
I DSS
V GS = 10 V; I D = I D100 ?
V DS = V GS ; I D = 5.4 mA
V DS = V DSS ; V GS = 0 V
T VJ = 25°C
T VJ = 125°C
2
30
36
4
50
500
m W
V
μA
μA
1)
CoolMOS ? is a trademark of
Infineon Technologies AG.
I GSS
C iss
C oss
C rss
V GS = ± 20 V; V DS = 0 V
V GS = 0 V; V DS = 25 V
f = 1 MHz
13.6
4.4
290
±200
nA
nF
nF
pF
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
R thJC
V GS = 0 to 10 V; V DS = 350 V; I D = 85 A
V GS = 13 V; V DS = 380 V
I D = 85 A; R G = 1.0 ?
500
50
240
20
27
110
10
640
0.18
nC
nC
nC
ns
ns
ns
ns
K/W
?
Pulse test, t < 300 μs, duty cycle d < 2%
IXYS reserves the right to change limits, test conditions and dimensions.
? 2010 IXYS All rights reserved
20100315c
1-4
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